| PART |
Description |
Maker |
| CMXD4448 |
SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| P11976EJ2V0AN00 |
uPC2711-15. uPC2745-49. uPC2791/92. uPC3210 6-Pin Mini-Mold. 6-Pin Super Mini-Mold Silicon High-Frequency Wideband Amplifier MMIC uPC2711 - 15uPC2745 - 49uPC2791/92uPC3210 6引脚小型模具6引脚超小型模具硅高频宽带放大器单
|
Richtek Technology, Corp.
|
| CMSSH-3S CMSSH-3C CMSSH-3A |
SUPER-MINI SCHOTTKY DIODES
|
Central Semiconductor Corp.
|
| C031-70252 |
MINI BNC BULKHEAD ISOLATED CRIMP JACK(FOR 735A CABLE)
|
Amphenol Corporation
|
| MMBZ5224BTW MMBZ5222BTW MMBZ5260BTW MMBZ5235BTW MM |
TRIPLE ISOLATED 200mW ZENERS
|
Pan Jit International I...
Pan Jit International Inc.
|
| B8-2415T10 B8-2415T15 B8-1215T10 B8-1215T15 B8-121 |
10 to 15 Watt Isolated DC-DC Converter Triple Output
|
Bothhand USA, LP.
|
| MMBZ5223BTW MMBZ5222BTW MMBZ5221BTW MMBZ5224BTW MM |
TRIPLE ISOLATED 200mW ZENERS 三重隔震200mW的齐纳基准源
|
PanJit International Inc.
PanJit International, Inc.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| L2SA1235FLT1G L2SA1235FLT3G |
General Purpose Transistor Super mini package for easy mounting
|
Leshan Radio Company
|
| SFAF801G SFAF801G13 |
8.0AMPS. Isolated Glass Passivated Super Fast Rectifiers
|
Taiwan Semiconductor Company, Ltd
|
